- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
Pune, India, Aug. 03, 2021 (GLOBE NEWSWIRE) -- The global SiC based power electronics and inverter market size is expected to gain momentum by reaching USD 5,816.5 million by 2028 while exhibiting ...
به خواندن ادامه دهیدنانوفناوری، توانمندی تولید و ساخت مواد، ابزار و سیستم‌های جدید با در دست گرفتن کنترل در مقیاس نانومتری یا همان سطوح اتمی و مولکولی، و استفاده از خواصی است که در این سطوح ظاهر می‌شوند.
به خواندن ادامه دهیدARM® Cortex®-M7 480MHz/400MHz FLASH 1.62V ~ 3.6V 32-Bit LQFP-100 ST Microelectronics ROHS. ... خرید میکروکنترلر Stm32h750vbt6. تجهیزات ابزار ... دیجی‌قطعه در زمینه فروش قطعات الکترونیکی ، طراحی، ساخت، تولید و تعمیرات فعالیت می‌کند. این ...
به خواندن ادامه دهیدContribute to sbmboy/fa development by creating an account on GitHub.
به خواندن ادامه دهید0. دسته‌بندی نشده. تاریخچه فناوری نانو در ایران : فناوری نانو توانمندی تولید مواد ابزار و سیستم های جدید با کنترل سطوح مولکولی و اتمی و استفاده از خواصی است که در آن سطوح ظاهر می شود. نانو رشته ...
به خواندن ادامه دهیدبررسی اثر سرعت چرخشی ابزار بر کامپوزیت سازی سطحی آلیاژ آلومینیوم ۵۷۵۴ با افزودن نانوذرات سرامیکی SiC محل انتشار: ششمین کنفرانس بین المللی مهندسی مکانیک ، مواد و متالورژی
به خواندن ادامه دهیدSTMicroelectronics ha annunciato la prossima costruzione un impianto integrato per la produzione di substrati in carburo di silicio in Italia, più precisamente nel sito di Catania, accanto allo stabilimento già esistente che produce dispositivi in SiC. STMicroelectronics: a Catania un impianto integrato per la produzione di substrati in …
به خواندن ادامه دهیدGeneva, Switzerland; Nuremberg, Germany – May 10, 2022 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has ...
به خواندن ادامه دهیدبررسی تاثیر سرعت چرخش ابزار در فرآیند اصطکاکی اغتشاشی بر رفتار تنش کرنش کامپوزیت A17075-SiC محل انتشار: سومین کنفرانس ملی مهندسی مواد، مهندسی شیمی و ایمنی صنعتی
به خواندن ادامه دهیدSTMicroelectronics to build integrated Silicon Carbide substrate manufacturing facility in Italy. First-of-a-kind SiC epitaxial substrate manufacturing facility in Europe. Full …
به خواندن ادامه دهیدJuly 27, 2021 - STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has manufactured the first 200mm (8-inch) Silicon-Carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden. The transition to 200mm SiC ...
به خواندن ادامه دهیدOctober 05, 2022 02:00 ET | Source: STMicroelectronics N.V. Follow. STMicroelectronics to build integrated Silicon Carbide substrate manufacturing facility in Italy. First-of-a-kind SiC epitaxial ...
به خواندن ادامه دهیدShares of silicon carbide semiconductor manufacturers Wolfspeed (WOLF 6.64%), STMicroelectronics (STM 0.02%), and Allegro MicroSystems (ALGM 0.85%) fell this week, down 22.5%, 9.7%, and 14.6% ...
به خواندن ادامه دهیدなを. STマイクロエレクトロニクスは、でもなポートフォリオをしており、たちのらしのあらゆるシーンでするなけに、なソリューションをしています。. STは、を ...
به خواندن ادامه دهیدUnnerved by a pre-pandemic electronics materials shortage, STMicroelectronics took the decision to start bringing its supply chain for silicon carbide …
به خواندن ادامه دهیدSiC is now the material of choice for EVs, and market research firm Yole Group predicts that the EV/hybrid-vehicle market will represent more than 70% of the SiC market, equating to $4.7 billion, in 2027. The sustained demand for SiC wafers is such that IDMs like ST, Infineon and onsemi are adjusting their strategies to meet the …
به خواندن ادامه دهیدGeneva (Switzerland) and Xiamen (China), June 7, 2023 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, and Sanan ...
به خواندن ادامه دهیدSwitzerland-based chipmaker STMicroelectronics (ST) released its fourth-quarter and fiscal 2022 financial results on January 26, 2023.The company reported fourth quarter net revenues of US$4.42 ...
به خواندن ادامه دهیدST has announced that it has begun manufacturing 200mm Silicon-Carbide (SiC) wafers at its Norrköping, Sweden facility. Manufacturers have long employed 200mm and larger wafers in the production of CMOS chips, but ST is reportedly the first to extend the technology to silicon carbide fabrication. They won't be the last, because transitioning ...
به خواندن ادامه دهیدST's latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for e- mobility and energy-efficient industry. Continued long …
به خواندن ادامه دهیدGeneva, Switzerland, July 27, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has ...
به خواندن ادامه دهیدThe real breakthrough in high voltage switching. Based on the advanced and innovative properties of wide bandgap materials, ST's STPOWER SiC MOSFETs feature very low R DS (on) per area, with the new …
به خواندن ادامه دهید11 Gennaio 2022. 137. STMicroelectronics presenta la terza generazione di MOSFET in carburo di silicio (SiC) STPOWER, che innova ulteriormente i dispositivi di potenza per il gruppo propulsore dei veicoli elettrici (EV) e altre applicazioni in cui la densità di potenza, l'efficienza energetica e l'affidabilità sono criteri fondamentali.
به خواندن ادامه دهیدThe main features of our SiC MOSFETs include: Automotive-grade (AG) qualified devices. Very high temperature handling capability (max. T J = 200 °C) Very high switching frequency operation and very low switching losses. Low on-state resistance. Gate drive compatible with existing ICs. Very fast and robust intrinsic body diode.
به خواندن ادامه دهیدST's portfolio of silicon carbide (SiC) devices incluses STPOWER SiC MOSFETs ranging from 650 to 2200 V with the industry's highest junction temperature rating of 200 °C for …
به خواندن ادامه دهیدUnder this research collaboration, A*STAR's IME and STMicroelectronics aim to develop and optimize SiC integrated devices and package modules to offer significantly better performance in next ...
به خواندن ادامه دهیدSTMicroelectronics is planning integrated silicon carbide substrate manufacturing facility on the Italian island of Sicily to support demand for SiC ICs from automotive and industrial customers. "Production is expected to start in 2023, enabling a balanced supply of SiC substrate between internal and merchant supply," said the …
به خواندن ادامه دهیدTornando a STMicroelectronics, la multinazionale italo-francese produce attualmente dispositivi SiC di potenza in volumi su due linee per substrati da 150 mm negli stabilimenti di Catania e Ang Mo Kio (Singapore), mentre le operazioni di assemblaggio e collaudo si svolgono nei siti back-end di Shenzhen (Cina) e Bouskoura (Marocco).
به خواندن ادامه دهیدSTMicroelectronics will build an integrated silicon carbide (SiC) substrate manufacturing facility in Italy to support the increasing demand from customers for SiC …
به خواندن ادامه دهیدシェア40％（2021、ベース）。、ケイ（SiC）パワーデバイスでなにいるのが、STMicroelectronics（STマイクロエレクトロニクス）だ。ののきっかけは、2017にをしたTeslaの（EV）「Model 3」のモーターインバーターに ...
به خواندن ادامه دهیدThe Next Chapter. After 25 years, Silicon Carbide is entering a more mature stage. As a result, the industry won't see ohmic resistance decrease as drastically as before, but it will see more robust devices. Costs will also continue to decrease as ST fabs experiment with larger wafers and new processes.
به خواندن ادامه دهیدGeneva, December 7, 2022 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has released high-power modules for ...
به خواندن ادامه دهیدSTMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, will build an integrated Silicon …
به خواندن ادامه دهیداین مطالعه نیز در مورد یکی از کامپوزیت های پرکاربرد تحت عنوان کامپوزیت های پایه فلزی آلومینیوم به همراه مواد تقویت کننده افزودن Sic, Bi می باشد. ترکیب آلومینیوم که ماده ای نرم با وزن سبک و ...
به خواندن ادامه دهیدThis transition is within the Company's ongoing plan to build a new SiC substrate plant and source over 40% of its SiC substrates internally by 2024.
به خواندن ادامه دهیدبرد دیسکاوری STM32F411RE- STM32F411RE Discovery Board. بردهای STM بردهایی هستند که در ابتدا توسط شرکت فرانسوی – ایتالیایی STMicroelectronics تولید شدند. این بردها انواع بسیار متنوعی دارند که در ابتدا ممکن است باعث ...
به خواندن ادامه دهید