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Infineon acquires Siltectra, a specialist for silicon carbide

Infineon offers the broadest product portfolio of power semiconductors based on silicon as well as the innovative substrates of silicon carbide and gallium nitride. It is the only company worldwide with volume production on 300 mm silicon thin wafers. Therefore, Infineon is well positioned to apply the thin wafer technology to SiC products …

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Infineon Technologies

Infineon Technologies designs and manufactures a range of semiconductor products across the automotive, power electronics, industrial power control, security IC, and IoT markets. ... with minimal loss of material, for €124 million (~$142 million). Infineon planned to use it to split silicon carbide (SiC) wafers, thus doubling the …

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Infineon Expands Supply Base for Silicon Carbide with GT

Joint press release of GT Advanced Technologies and Infineon Technologies AG. MUNICH, Germany and HUDSON, N.H., Nov. 09, 2020 (GLOBE NEWSWIRE) -- Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY ...

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Avnet Announces Strategic Collaboration with Infineon to …

The CoolSiC ™ portfolio ranges from SiC-based diodes and discrete MOSFETs to hybrid and full SiC modules. As part of the cooperation between the two companies, Avnet is selling an exclusive entry-level evaluation board ( EVAL-1ED3122MC12H-SiC ) from Infineon that is designed to provide engineers and …

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2022 Fiscal Year: Very strong growth for Infineon Austria

The Infineon Technologies Austria Group (Infineon Austria) achieved very good results in the past 2022 fiscal year (closing date: 30 September 2022). The Austrian subsidiary of the German semiconductor group generated Euro 5.240 billion. The previous year's figure (revenue 2021: 3.898 billion euros) was thus expanded by 34 percent.

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Infineon adds 650 V TOLL portfolio to its

Infineon is introducing its silicon carbide CoolSiC™ MOSFET 650 V in TO leadless (TOLL) packaging. These new SiC MOSFETs optimize performance for various applications and offer high reliability, low losses, and ease-of-use while enabling efficient power density and thermal management.

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Infineon invests €2 billion in GaN/SiC manufacturing

17th February 2022. Infineon Technologies AG. Louis Regnier. 0 0. Infineon has added significant manufacturing capacities in the field of wide bandgap …

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Infineon increases supply security for silicon

"Our aim is to continuously improve our SiC material and develop the next technology. We value Infineon as an excellent partner in this regard." The contract between Infineon and Showa Denko K.K. has a two-year term with an extension option. Infineon has the industry's largest portfolio of SiC semiconductors for industrial applications.

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GTAT to supply silicon carbide boules to Infineon

News: Suppliers 9 November 2020. GTAT to supply silicon carbide boules to Infineon. GT Advanced Technologies (GTAT) of Hudson, NH, USA has signed a contract (with an initial term of five years) to supply silicon carbide (SiC) boules to Infineon Technologies AG of Munich, Germany, which is therefore adding a further element to secure its growing base …

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ヴィテスコ・テクノロジーズ、シリコンカーバイドのパワー …

て、SiC は、に800 ボルトのバッテリーにおいてで、その、 のをします。「はバッテリーによるにお いてキーパフォーマンスとなります。このため、SiC のようなのパワー

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Infineon further diversifies its silicon

Infineon's SiC manufacturing capacity will increase tenfold by 2027. A new plant in Kulim, Malaysia is scheduled to start production in 2024, adding to Infineon's manufacturing capacities in Villach, Austria. Today, Infineon already provides SiC semiconductors to more than 3,600 automotive and industrial customers worldwide.

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Robustness and reliability aspects of SiC power devices

The potential degradation in bipolar SiC elements: Recombination induced increase of R DS(on) and V SD Bipolar degradation might affect all SiC MOSFET technologies Effect is defect-driven and related to defects of substrate material Statistical effect: devices without these defects will not have bipolar degradation effect

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Infineon and Cree agree on long-term supply of

Since Infineon has already converted all its SiC manufacturing lines to the most advanced 150 millimeter SiC wafers, the agreement with Cree covers only this wafer diameter. "We have known …

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Infineon expands supplier base for silicon

Aug 23, 2022| Business & Financial Press. Munich, Germany – 23 August 2022 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and II-VI Incorporated (Nasdaq: IIVI) have signed a multi-year supply agreement …

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Infineon and Foxconn partnering on silicon carbide for EVs

The Memorandum of Understanding (MoU) focuses on silicon carbide (SiC) development, leveraging Infineon's automotive SiC innovations and Foxconn's expertise in automotive systems. "With the rapid growth of the EV market and the associated need for more range and performance, the development of electro-mobility must continue to …

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Silicon Carbide Market Share, Trends, Global Growth and

June 2020: Infineon announced the launch of new SiC powder modules for EVs. Worldwide Silicon Carbide Market Scope: The report offers detailed insight into new product launches, new technology ...

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Infineon Technologies : further diversifies its silicon carbide

Infineon's SiC manufacturing capacity will increase tenfold by 2027. A new plant in Kulim, Malaysia is scheduled to start production in 2024, adding to Infineon's manufacturing capacities in Villach, Austria. Today, Infineon already provides SiC semiconductors to more than 3,600 automotive and industrial customers worldwide.

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Infineon scales up volume production and

The production ramp of the silicon carbide (SiC) MOSFET base technology has been safely completed, Infineon is now bringing the most comprehensive discrete SiC portfolio for industrial applications to the market. The 1200 V CoolSiC™ MOSFET devices are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings.

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Infineon Technologies launches new power module

Infineon Technologies is launching a new power module with CoolSiC MOSFET technology for automotive applications. The use of silicon carbide instead of silicon ensures higher efficiency in converters in electric vehicles. The technology is used, among others, in the Hyundai Ioniq 5. With the same space requirement, the power …

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Infineon and Infypower cooperate to expand …

This drives the increasing adoption of SiC power devices in EV charging modules. As one of the first SiC power semiconductor manufacturers to use trench gate …

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Infineon further diversifies its silicon

Munich, Germany – 3 May, 2023 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has signed an agreement with Chinese silicon carbide (SiC) supplier SICC to diversify Infineon's SiC material …

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Infineon Technologies (IFNNY) Stock Forecast, Price & News

Infineon Technologies AG (OTCMKTS:IFNNY) posted its earnings results on Thursday, August, 3rd. The technology company reported $0.74 EPS for the quarter, beating analysts' consensus estimates of $0.68 by $0.06. The technology company had revenue of $4.45 billion for the quarter. Infineon Technologies had a trailing twelve …

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SiC Devices Used in PFC for EV Charger Applications

This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status of silicon carbide (SiC) devices and their advantages, as well as the SiC technology development at Infineon. A three-phase, Vienna rectifier solution for unidirectional chargers, a two-level, three phase, active front-end …

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How .XT technology in the latest 1200 V CoolSiC™ M

Fortunately, customers can take a leap forward by using the new 1200 V CoolSiC TM MOSFETs with low ON resistance (R DS (ON) ). This new product implements .XT technology in TO247 packages and is available in 7 mΩ, 14 mΩ, 20 mΩ, 40mΩ. With the juction-to-case thermal resistance (R thJC) reduction from .XT technology, it is …

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Infineon signs an agreement with silicon carbide supplier SICC

In order to diversify its supply chain for SiC materials and to obtain more affordable SiC sources, Infineon Technologies has entered into a contract with Chinese …

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Infineon expands supplier base for silicon

Infineon expects its SiC semiconductor sales to grow by more than 60 percent on average per year, reaching approximately $1 billion by mid-decade. For the second half of the decade, Infineon expects on-going growth momentum, for which it invests in its recently announced additional manufacturing block in Kulim, Malaysia.

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Review of Silicon Carbide Power Devices and Their …

Fig. 1 Material properties comparison between Si and SiC (Range 1-5 are marked for all the five properties) [3] Since the introduction of the first commercial SiC Schottky diode by Infineon in 2001, there has been strong momentum in SiC technology development and market growth. Fig. 2 summarizes some key SiC development milestones [6]. Fig. 3

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Reduce costs with Infineon CoolSiC™ technology | Avnet Inc.

Enter to win the new EVAL-1ED3142MU12F-SiC. Register now to win this entry-level evaluation kit designed to evaluate the functionality and capability of two 1200 V CoolSiC™ MOSFETs and Infineon's new 1ED3142 gate driver IC in a half-bridge configuration. Comes with the EVAL-PSIR2085 isolated power supply board to get you up and running quickly!

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Silicon Carbide MOSFET Discretes

650 V up to 2000 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies. Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio ...

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IMZA120R007M1H

The CoolSiC™ 1200 V, 7 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and …

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Analysis Of II-VI's SiC Wafer Agreement With Infineon …

II-VI made the first 200mm SiC back in 2015. So if you go by SiC real estate and area = pi x radius squared, you get about 1.75 more ICs per wafer by going to 200mm. II-Vi and WOLF are going full ...

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SiC Giants Aquisitions and Mergers | CHIPLIX

On November 12, 2018, Infineon acquired Siltectra GmbH, a start-up based in Dresden that developed an innovative technology called Cold Split. The technology efficiently processes crystal materials while minimizing material loss. Infineon will utilize Cold Split to split silicon carbide (SiC) wafers, doubling the number of chips per wafer.

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CoolSiC™ 1200 V SiC MOSFET

Silicon carbide (SiC) as a compound semiconductor material is formed by silicon (Si) and carbon (C). Currently, 4H–SiC is preferred for power devices primarily because of its high carrier mobility, particularly in the vertical c-axis direction. Table 1 summarizes the physical property differences between Si and SiC [1]. As a rule of thumb ...

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Coherent: Gaining Momentum In Silicon Carbide From …

Infineon has inked deals to supply SiC chips to Stellantis, Hyundai, VW, and Tesla made on Coherent's SiC wafers. These four EV companies shipped 31% of the 5 million vehicles year to date ...

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Infineon and Resonac announce the expansion of

Infineon is currently expanding its SiC manufacturing capacity in order to reach a market share of 30 percent by the end of the decade. Infineon's SiC manufacturing capacity is about to increase tenfold by 2027. A new plant in Kulim is scheduled to start production in 2024. Today, Infineon already provides SiC semiconductors to more than ...

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Vertical integration is shaping the Power SiC ecosystem

Its goal is to support its rapidly growing SiC business. Meanwhile, Infineon Technologies delivered 126 percent growth of its SiC device business in 2021, outperforming the 57 percent average growth rate. The design-win of the 800V Hyundai Ioniq5 developed by Infineon helped push it into the fast lane.

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