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100. $1.80. Buy. Qorvo's UJ3D06506TS is a 6 A, 650 V SiC Merged PiN Schottky (MPS) diode in a TO-220-2L package. With zero reverse recovery charge and 175 C maximum junction temperature, this diode is ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. Key Features.
به خواندن ادامه دهیدView Our News. Year Type. 09/12/2023. Qorvo Introduces World's Highest Power Ku-Band Satellite Communications Amplifier. 08/31/2023. Qorvo to Present at the Goldman Sachs Communacopia + Technology Conference. 08/29/2023. Qorvo Named a STEM Workforce Diversity Magazine Top 50 Employer for 2023. 08/28/2023.
به خواندن ادامه دهید2000 درجه. نوع. سرامیکی، نانو و سیلیکونی. چسب ضد حرارت مانع از نفوذ رطوبت و آب می شود، دیگر اینکه استحکام زیادی در برابر سرمای زیاد و یخبندان دارد، همین مشخصات موجب مصرف زیاد چسب و محبوبیت آن در ...
به خواندن ادامه دهیدQorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged ...
به خواندن ادامه دهیدDownload full size image. GREENSBORO, NC – September 15, 2022 – Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, announces the availability of the …
به خواندن ادامه دهید- 202111 3 —、、 RF Qorvo®, Inc.（：QRVO）,（SiC）UnitedSiC。. UnitedSiC ...
به خواندن ادامه دهیدGREENSBORO, N.C. and AUBURN, Mich., Nov. 02, 2022 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and …
به خواندن ادامه دهیددرباره انواع محصولات سرامیکی باید گفت که نوار سرامیک یا همان نوار سرامیک فایبر، یک نوار نسوز سرامیکی بسیار پر کاربرد است که در بین تمام مواد نسوز دارای بیشترین تحمل دما میباشد. ماده اصلی و ...
به خواندن ادامه دهیدGREENSBORO, N.C., Nov. 03, 2021 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, …
به خواندن ادامه دهیدSiC JFETs Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS(on)) as low as 25 mohms. New Power Management Products. PAC5526. 48 V Charge Pump BLDC Motor Driver with Programmable Current. PAC5285. 40 V / 20 W BLDC Controller/Driver …
به خواندن ادامه دهیدما یک تولید کننده هستیم که عمدتاً محصولات سرامیکی خاص SiC و محصولات اضافی زنجیره صنعت سرامیک ویژه را تولید می کنیم.گروه ما دارای 5+ شرکت برای رفع نیازهای مختلف محصول است.
به خواندن ادامه دهیدQorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS (on)) as low as 25 mohms. Gate charge (QG) is also low, allowing for low conduction and reduced switching loss. These products are also ideal for circuit protection applications.
به خواندن ادامه دهیدInvestor Relations Contact: Doug DeLieto VP, Investor Relations W +1 336-678-7968: Media Contact: Brent Dietz Qorvo Director of Corporate Communications
به خواندن ادامه دهیدBased on a unique cascode configuration, the recently announced Generation 4 SiC FETs are specified at an industry-leading 750V at 5.9 milliohm RDS(on), enabling new levels of SiC efficiency and ...
به خواندن ادامه دهیدQorvo's family of SiC Schottky diodes that are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. SiC JFETs. Qorvo's family of SiC JFETs are high-performance SiC normally-on JFET transistors, from 650V to 1700V, with ultra-low on resistance (RDS (on)) as low as 25mohm.
به خواندن ادامه دهیدآشنایی با قطعات سرامیکی با قابلیت ماشین‌کاری – گروه ترمو. المنت مولیبدن. عایق‌های سرامیکی. سیم نسوز. المنت سیلیکون کارباید. قطعات سرامیک صنعتی. تلفن: 09128162522. تلفن : ۳۳۹۹۵۹۸۷-۳۳۹۳۰۹۴۶. تهران ...
به خواندن ادامه دهیدDrawing on nearly 30 years of providing industry-leading solutions, Qorvo continues to offer the products that enable the next generation of systems. From GaAs, GaN, SAW, BAW, CMOS and SiGe, Qorvo has the right technology, the right products and the right solutions to help you shape and launch your most powerful new ideas for a broad range of mobile, …
به خواندن ادامه دهیدDate. 11/04/2021. PDF. November 4, 2021– Qorvo® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, has announced that it …
به خواندن ادامه دهیدQorvo Announces Industry's Smallest Low Voltage Transmit Module for Cellular IoT: 09/12/2023 : Qorvo Introduces World's Highest Power Ku-Band Satellite Communications Amplifier: 08/31/2023 : Qorvo to Present …
به خواندن ادامه دهیدExplore Silicon Carbide (SiC) power products, solutions and more on the Qorvo website: SiC power products: SiC FETs; SiC JFETs; SiC Diodes; SiC power resources: FET-Jet …
به خواندن ادامه دهیدکامپوزیت های زمینه سرامیکی تنها کامپوزیت هایی هستند که بالای ۹۰۰ درجه سانتیگراد استحکام خود را حفظ می کنند. کامپوزیت های زمینه سرامیکی (CMCs) نوع خاصی از مواد کامپوزیت هستند که در آن هم تقویت ...
به خواندن ادامه دهیدDoug Cole, general manager of Qorvo's Defense and Aerospace business, said, "With the QPD1034, Qorvo again demonstrates we can deliver superior GaN-on-SiC solutions.
به خواندن ادامه دهیدGreensboro, NC, November 3, 2021 – Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United Silicon Carbide ...
به خواندن ادامه دهیدGREENSBORO, NC and AUBURN, MI – November 2, 2022 – Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, and SK …
به خواندن ادامه دهیدQorvo offers a wide array of silicon carbide (SiC) FETs, JFETs and Schottky Diodes. Our SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole and surface mount packages, with excellent cost effectiveness. Our SiC JFETs are high-performance normally-on JFET transistors with ultra-low on ...
به خواندن ادامه دهیدThe 60-milliohm part (UJ4C075060K4S) is less than half the cost of the best SiC FET considered, for the penalty of 22W extra dissipation and a junction temperature of 122°C. Better heatsinking can be considered for a cost trade-off with device type and temperature rise, but the extra size and weight are the downside in EV applications.
به خواندن ادامه دهیدThe acquisition of UnitedSiC has extended Qorvo's reach into the fast-growing markets for electric vehicles (EVs), industrial power, circuit protection, renewables and data center power. This post is a collection of blogs that provide you with a deep dive into a comprehensive understanding of silicon carbide (SiC) power semiconductors and …
به خواندن ادامه دهیدمحصولی از جنس الیاف سرامیکی که از ترکیب سرامیک فایبر و بایندر های آلی و معدنی تحت فرآیند وکیوم تولید می گردد.رنج استاندار دمائی تخته های سرامیکی عبارتند از 1260، 1430، 1600 و 1800 درجه سانتی گراد و ...
به خواندن ادامه دهیدIn November 2021, Qorvo acquired United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of …
به خواندن ادامه دهیدQorvo's new chipset optimizes one of the largest and most expensive parts of a phased array system: the pulsed-energy storage capacitors. Through an innovative new architecture, this solution reduces capacitance by up to 90%, shrinking system volume by up to 30% while reducing weight and operating costs. Philip Chesley, president of Qorvo's ...
به خواندن ادامه دهیدNews: Microelectronics 4 November 2021. Qorvo acquires silicon carbide power semiconductor supplier UnitedSiC. Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has acquired silicon carbide (SiC) power semiconductor manufacturer …
به خواندن ادامه دهیدQPD2731 new asymmetric Doherty amplifier that enables customers to achieve ultra-high levels of power efficiency in the design of wireless base station equipment. The next-generation gallium nitride on silicon carbide (GaN-on-SiC) solution features two transistors in a single package to maximize linearity, efficiency and gain, …
به خواندن ادامه دهیدQorvo's silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling …
به خواندن ادامه دهیدQorvo's variable gain amplifiers (VGAs) integrate high-performance amplifier solutions along with digital or analog gain control. Several of our VGAs integrate all of the RF matching and bias circuitry into a single package, providing a very compact solution and reducing PCB space. Check out our schedule of upcoming shows and technical programs.
به خواندن ادامه دهیدQorvo (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has acquired Princeton, New Jersey-based …
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