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Discrete Semiconductor Products FETs, MOSFETs Single FETs, MOSFETs onsemi NTH4L014N120M3P Image shown is a representation only. Exact specifications should …
به خواندن ادامه دهیدBuy NTH4L014N120M3P - Onsemi - Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247. element14 New Zealand offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support.
به خواندن ادامه دهیدLearn More about onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET View Products related to onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET. Learn More About EliteSiC onsemi EliteSiC. Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
به خواندن ادامه دهیدonsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. Skip to Main Content +852 3756-4700. Contact Mouser +852 3756-4700 | …
به خواندن ادامه دهیدNTH4L014N120M3P/D Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, TO247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 m @ VGS = 18 V • Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations
به خواندن ادامه دهیدNTH4L160N120SC1 3 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Energy EREC VGS = −5/20 V, ISD = 16 A, dIS/dt = 1000 A/ s − 3.9 − J
به خواندن ادامه دهیدBuy NTH4L014N120M3P - Onsemi - Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247. Newark offers fast quotes, same day shipping, fast delivery, …
به خواندن ادامه دهیدNVHL020N120SC1 3 TYPICAL CHARACTERISTICS 16 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and Gate Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 0 2 0 200 250 0 50 150 250 0.5 1.0 1.5 Figure 3.
به خواندن ادامه دهیدNTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
به خواندن ادامه دهیدNTH4L014N120M3P onsemi US$47.5014 - TO-247-4 MOSFETs ROHS datasheet, price, inventory C5209032
به خواندن ادامه دهیدSilicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L
به خواندن ادامه دهیدOrder today, ships today. NTH4L014N120M3P – N-Channel 1200 V 127A (Tc) 686W (Tc) Through Hole TO-247-4L from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
به خواندن ادامه دهیدonsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimised for power applications. The onsemi MOSFET features Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family provides optimum performance when driven with an 18V gate drive, but also works well with a 15V gate drive.
به خواندن ادامه دهیدBuy NTH4L014N120M3P - Onsemi - Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, datasheets & technical support.
به خواندن ادامه دهیدSOT-363-6 MOSFET, DFN2020MD-6 MOSFET, Enhancement 50 A SMD/SMT N-Channel 30 V MOSFET, SMD/SMT 1 Channel PowerPAK SO-8 N-Channel 2.2 V MOSFET, 12 A N-Channel 250 V MOSFET, 1.8 A N-Channel MOSFET. Technical Specifications. Product Description.
به خواندن ادامه دهیدNTH4L040N120SC1 4 TYPICAL CHARACTERISTICS 16 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and Gate Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 0 2 0 80 100 0 20 50 100 0.5 1.0 1.5 Figure 3.
به خواندن ادامه دهیدDescription: MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 14mohm, 1200V, M3P, TO-247-4L Lifecycle: New Product: New from this manufacturer. Datasheet: NTH4L014N120M3P Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. More Information
به خواندن ادامه دهید： ONSEMI - NTH4L014N120M3P - Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247 1+ 453.34149 1+ 54.68524
به خواندن ادامه دهیدNTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
به خواندن ادامه دهیدNTH4L020N120SC1 4 TYPICAL CHARACTERISTICS 16 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and Gate Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 0 2 0 200 250 0 50 250 0.5 1.0 1.5 Figure 3.
به خواندن ادامه دهیدNTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
به خواندن ادامه دهیدonsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. Přeskočit na Hlavní obsah +420 517070880. Kontaktovat Mouser (Brno) +420 517070880 | Podněty. Změnit místo. Čeština. English; CZK. Kč CZK € EUR $ USD Česká Republika. Potvrďte vybranou měnu:
به خواندن ادامه دهیدDescriptions Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L Technical Attributes Find Similar Parts ECCN / UNSPSC / COO
به خواندن ادامه دهیدNTH4L014N120M3P onsemi MOSFET SIC MOS TO247-4L 14MOHM 1200V datasheet, inventory & pricing. Skip to Main Content +60 4 2991302. Contact Mouser (Malaysia) +60 4 2991302 | Feedback. Change Location English MYR. RM MYR $ USD Malaysia. Please confirm your currency selection: Ringgits
به خواندن ادامه دهیدNTH4L014N120M3P Datasheet (HTML) - ON Semiconductor: NTH4L014N120M3P Product details: Features • Typ. RDS(on) = 14 m @ VGS = 18 V • Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications
به خواندن ادامه دهیدNTH4L014N120M3P/D Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 m @ VGS = 18 V • Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle …
به خواندن ادامه دهیدThe 1200V EliteSiC MOSFETs provide system benefits and include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, low capacitance, and operate at -55°C to 175°C temperature range. The 1200V SiC …
به خواندن ادامه دهیدNTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
به خواندن ادامه دهیدonsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. The onsemi MOSFET features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family has optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.
به خواندن ادامه دهیدNTH4L014N120M3P onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 14mohm, 1200V, M3P, TO-247-4L datasheet, inventory & pricing.
به خواندن ادامه دهیدNTH4L014N120M3P Silicon Carbide (SiC) MOSFET onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimised for power applications. The onsemi MOSFET features Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family provides optimum performance when driven with an 18V gate …
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به خواندن ادامه دهیدnth4l014n120m3p disti # nth4l014n120m3p onsemi Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L (Alt: NTH4L014N120M3P) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 46 Weeks, 0 Days
به خواندن ادامه دهیدNTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
به خواندن ادامه دهیدNTH4L014N120M3P. 1 cart items. Signal Conditioning & Control Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected …
به خواندن ادامه دهیدThe new family of 1200V M3P planar SiC MOSFETs is optimized for power applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. NTH4L014N120M3P is in TO-247-4L package, while ...
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