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به خواندن ادامه دهیدNTH4L028N170M1 3 TYPICAL CHARACTERISTICS 16 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and Gate Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. …
به خواندن ادامه دهیدMOSFET, N-CH, 1.7KV, 81A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each: 0 1 S$64.1700 S$64.1700 Buy Now Top of Page ↑ Avnet Asia Authorized Distributor. Part # Manufacturer Description Stock Price Buy; Details. NTH4L028N170M1 ...
به خواندن ادامه دهیدonsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. …
به خواندن ادامه دهیدNTH4L028N170M1. 1 cart items. Signal Conditioning & Control Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected …
به خواندن ادامه دهیدNTH4L028N170M1: 253Kb / 8P: Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm March, 2022 ??Rev. 0: Search Partnumber : Start with "NTH4L028N170M1" …
به خواندن ادامه دهیدBuy onsemi NTH4L028N170M1 in Avnet APAC. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Silicon Carbide (SiC) MOSFETs & Modules products.
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به خواندن ادامه دهیدEAS of 450 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 30 A, VDD = 120 V, VGS = 18 V. D S1 G S2 V(BR)DSS RDS(ON) MAX ID MAX 1700 V 40 m @ 20 V 81 A N−CHANNEL MOSFET TO−247−4L CASE 340CJ ORDERING INFORMATION Device Package Shipping NTH4L028N170M1 TO−247−4L 30 Units / Tube H4L028N170M1 = …
به خواندن ادامه دهیدNTH4L028N170M1. Description. SIC MOSFET 1700 V 28 MOHM M1 SER. Manufacturer Standard Lead Time. 46 Weeks. Detailed Description. N-Channel 1700 V 81A (Tc) 535W …
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به خواندن ادامه دهید1700 V 81A 535W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-4L. Future Electronics. MOSFET SiC MOSFET 1700 V 28 mohm M1 Series in TO247-4LD package. Utmel Electronic. Power Field-Effect Transistors. One Stop Electro. MOSFET, SIC, 1.7KV, 81A, TO-247; Farnell.
به خواندن ادامه دهیدAt a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Q g) of 200nC, compared to equivalent competitive devices that are closer to 300nC. A low Q g is critical to achieving high efficiency in fast switching, high-power renewable energy applications. The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a ...
به خواندن ادامه دهیدBuy onsemi NTH4L028N170M1 in Avnet Americas. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Silicon Carbide (SiC) MOSFETs & Modules products.
به خواندن ادامه دهیدAt a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Q g) of 200nC, compared to equivalent competitive devices that are closer to 300nC.A low Q g is critical to achieving high efficiency in fast switching, high-power renewable energy applications.. The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a …
به خواندن ادامه دهیدShowing 1 of 1 results. Filter by Manufacturer. Image Part Number D.S Description Package Category Prices / Stock Model Action Image Part Number D.S Description Package Category Prices / Stock Model Action NTH4L028N170M1 onsemi. 1: MOSFET SIC 1700V MOS 28MO IN TO247-4L: Check Price & Stock ...
به خواندن ادامه دهیدMay 11, 2015 - دانلود رایگان نمونه سوالات ریاضی پیام نور به همراه پاسخنامه تستی و تشریحی ... مبانی آنالیز ریاضی, ۱۱۱۱۳۲۲, ۸۹-۱, ۸۹-۲, T89, ۹۰-۱, ۹۰-۲, T90, ۹۱-۱ · ۹۱-۲pt .... گروه لی و جبر لی مقدماتی, ۱۱۱۱۳۸۶, ۸۹-۱ ...
به خواندن ادامه دهیدNTH4L028N170M1. The NTH4L028N170M1 from onsemi is a MOSFET with Continous Drain Current 57 A, Drain Source Resistance 40 milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -15 to 25 V, Gate Source Threshold Voltage 4.3 V. Tags: Through Hole. More details for NTH4L028N170M1 can be seen below.
به خواندن ادامه دهیدWe would like to show you a description here but the site won't allow us.
به خواندن ادامه دهیدonsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications.
به خواندن ادامه دهید1 : Maximum Drain Source Voltage (V) 1700 : Maximum Gate Source Voltage (V) 25 : Operating Junction Temperature (°C)-55 to 175 : Maximum Continuous Drain Current (A) 81 : Maximum Drain Source Resistance (mOhm) 40@20V : Typical Gate Charge @ Vgs (nC) 200@20V : Typical Input Capacitance @ Vds (pF)
به خواندن ادامه دهیدSilicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm, NTH4L028N170M1 Datasheet, NTH4L028N170M1 circuit, NTH4L028N170M1 data sheet : ONSEMI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
به خواندن ادامه دهیدEAS of 450 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 30 A, VDD = 120 V, VGS = 18 V. D S1 G S2 V(BR)DSS RDS(ON) MAX ID MAX 1700 V 40 m @ 20 V 81 A N−CHANNEL MOSFET TO−247−4L CASE 340CJ ORDERING INFORMATION Device Package Shipping NTH4L028N170M1 TO−247−4L 30 Units / Tube H4L028N170M1 = …
به خواندن ادامه دهیدonsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. The onsemi …
به خواندن ادامه دهیدInventory, pricing and datasheets from authorized distributors of part NTH4L028N170M1. Use the trusted source to find the lowest prices and most stock.
به خواندن ادامه دهیدNTH4L028N170M1. 1 cart items. Signal Conditioning & Control Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected MOSFETs Rectifiers Audio Transistors Darlington Transistors ESD Protection Diodes JFETs Small Signal Switching Diodes Zener Diodes RF Transistors RF Diodes IGBTs.
به خواندن ادامه دهیدNTH4L028N170M1 Datasheet, NTH4L028N170M1 datasheets, NTH4L028N170M1 pdf, NTH4L028N170M1 integrated circuits : ONSEMI - Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm,alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other …
به خواندن ادامه دهید1700 V 81A 535W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-4L. NTH4L028N170M1 Datasheet. ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model. Mfr. Name: onsemi: Standard Pkg: Product Variant Information section.
به خواندن ادامه دهید900 $29.5918. 450 $31.7055. Show All. Buy Now. NTH4L028N170M1 price and availability organized by top electronic component distributors and suppliers.
به خواندن ادامه دهیدStock: 757. 757. Popular Searches: Through Hole 1 Channel TO-251-3 N-Channel 60 V MOSFET, TO-263-3 N-Channel 200 V MOSFET, 1 Channel P-Channel 150 V MOSFET, 15 A N-Channel 100 V MOSFET, 1 Channel P-Channel 20 V MOSFET, N-Channel - 30 V, + 30 V MOSFET. Technical Specifications. Product Description.
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به خواندن ادامه دهیدNTH4L028N170M1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L katalogový list, zásoby a ceny.
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