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SiC-Based Materials and Devices Enabling Electrification and Mobility at Scale May 29, 2020 Copyright 2020, II-VI Incorporated. All rights reserved. II-VI …
به خواندن ادامه دهیدインフィニオンはこれまで、SiCウエハーのWolfspeed（ウルフスピード）やCoherent（コヒレント、II-VI）、レゾナックなどとのをんできた。たに2とした …
به خواندن ادامه دهیدCoherent produces SiC epitaxy on up to 200 mm wafers with best-in-class uniformity. We offer a complete SiC materials solution with flexible specifications with the following capabilities: Thick epilayers with or without buffer; low-doped layers of up to 150 µm. Multilayer structures, various doping levels, including p-n junctions.
به خواندن ادامه دهیدTo meet the accelerating global demand for SiC power electronics, II-VI will significantly build out its nearly 300,000 square foot factory in Easton, to scale up the …
به خواندن ادامه دهیدNews: Suppliers 6 October 2020. II-VI completes Ascatron and INNOViON acquisitions, and joins SIA. Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – says that Sohail Khan has joined it as executive VP of New Ventures & Wide-Bandgap Electronics Technologies.
به خواندن ادامه دهیدPITTSBURGH, April 15, 2021 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced …
به خواندن ادامه دهیدインフィニオン テクノロジーズ (FSE: IFX / OTCQX: IFNNY) と II-VI Incorporated (Nasdaq: IIVI、ツーシックス) は、ケイ (SiC) ウエハーのをしました。. インフィニオンは、このへのアクセスをし、このにおける ...
به خواندن ادامه دهیدWith the help of custom silicon-carbide wafers, these devices can be manufactured in various configurations. In addition to this, II-VI also produces Silicon Carbide by epitaxial deposition on 150 mm silicon carbide wafers. The company is capable of producing tens of thousands of wafers every week. It also maintains a large complement of high ...
به خواندن ادامه دهیدHPL Bars & Stacks. HPL SE Pumps & Seeds. GaAs Optoelectronics. InP Optoelectronics. Lasers for Sensing. GaAs Electronic Devices.
به خواندن ادامه دهیدAs strategic partners, II-VI and Infineon are also collaborating in the transition to 200mm SiC diameter wafers. "SiC compound semiconductors set new standards in power density and efficiency. We are leveraging them to deliver on our strategy of decarbonization and digitalization," said Angelique van der Burg, Chief Procurement …
به خواندن ادامه دهیدPITTSBURGH, July 16, 2015 (GLOBE NEWSWIRE) -- II-VI Incorporated (Nasdaq:IIVI) - II-VI Advanced Materials, a world leading supplier of single crystal SiC... July 16, 2015 16:06 ET | Source ...
به خواندن ادامه دهیدAs the semiconductor shortage comes to an end, II-VI is strategically positioning itself as a Silicon Carbide (SiC) wafers and automotive chips leader. SiC inverter market for EVs for 2021 and ...
به خواندن ادامه دهیدSiC achieves superior efficiency, higher energy density, and lower system-level cost per watt compared with state-of-the-art silicon-based devices. Power electronics based on SiC have demonstrated their potential to have a highly beneficial impact on the environment via significant reductions in carbon dioxide emissions and energy …
به خواندن ادامه دهیدCoherent Silicon Carbide MOSFETs offer superior energy efficiency and performance over existing silicon technologies. Our devices offer 200 °C junction temperature capability along with industry leading avalanche ratings and superior specific on-resistance over full temperature range. These devices enable higher switching frequencies that ...
به خواندن ادامه دهیدThe backend SiC wafer processing performed at II-VI's new SiC facility in Fuzhou includes edge grinding, chemical-mechanical polishing, cleaning, and inspection, all performed in Class 100 and 1000 cleanrooms. The facility is part of II-VI's already announced plan to ramp its SiC substrate manufacturing capacity by five to ten times …
به خواندن ادامه دهیدNews: Suppliers 8 March 2022. II-VI accelerates 150-200mm SiC substrate and epi manufacturing expansion. As part of its previously announced $1bn investment in silicon carbide (SiC) over the next 10 years, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA is accelerating its investment in …
به خواندن ادامه دهیدTo meet the market demand in Asia, II-VI has established a backend processing line for conductive SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional ...
به خواندن ادامه دهیدThe backend SiC wafer processing performed at II-VI's new SiC facility in Fuzhou includes edge grinding, chemical-mechanical polishing, cleaning, and inspection, …
به خواندن ادامه دهیدThe unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency …
به خواندن ادامه دهیدII‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it has qualified its 1200 V silicon carbide MOSFET platform, on its high-quality SiC substrates, to stringent automotive standard requirements and is expanding its relationship with GE by signing a three-year technology access agreement (TAA) with …
به خواندن ادامه دهیدII-VI Incorporated, a global leader in engineered materials and optoelectronic components, is a vertically integrated manufacturing company that develops innovative products for diversified ...
به خواندن ادامه دهیدII‐VI Incorporated (Nasdaq: IIVI), a leading provider of silicon carbide substrates for power electronics, today announced that it will supply 200 mm silicon carbide (SiC) substrates under REACTION, a Horizon …
به خواندن ادامه دهیدII‐VI Incorporated has signed a multiyear agreement of over $100M, the largest in the history of II-VI, to supply silicon carbide (SiC) substrates for gallium nitride (GaN) RF power amplifiers deployed in 5G wireless base stations.. The accelerating rollout of 5G wireless services is driving deeper strategic relationships in the 5G wireless supply …
به خواندن ادامه دهیدSummarily, II-VI is expanding their SiC substrate capabilities in NJ, PA and MS. II-VI's long-term financial commitment combined with Government R&D funding has led to the creation of a world-class, merchant, SiC substrate-manufacturing capability. While Wolfspeed SiC production capability remains the largest, II-VI has made great strides ...
به خواندن ادامه دهیدPITTSBURGH and SANTA CLARA, CALIF., July 1, 2022 (GLOBE NEWSWIRE) – II‐VI Incorporated (Nasdaq: IIVI) today successfully completed the acquisition of Coherent, Inc. (Nasdaq: COHR), forming a global leader in materials, networking, and lasers. Under the terms of the merger agreement, each share of …
به خواندن ادامه دهیدThese plans include 200mm SiC wafer manufacturing and underline the importance of the massive Chinese market to II-VI. Germany's Infineon has also laid out its intention to increase SiC epitaxial wafer production after signing a two-year contract (including an extension option) with one of the industry's leading SiC epiwafer manufacturers ...
به خواندن ادامه دهیدAug 17, 2022 II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced that it closed an over $100 million contract to supply …
به خواندن ادامه دهیدAdditional Key Properties of II-VI Advanced Materials SiC Substrates (typical values*) Parameter Polytype Dopant Resistivity Orientation FWHM Roughness, Ra** Dislocation density Micropipe density N-type 4H Nitrogen ~0.02 Ohm-cm 4° off-axis < 20 arc-sec <5Å ~ 3·103 cm-2 < 0.1 cm -2 Semi-insulating 4H, 6H Vanadium > 10 11 Ohm-cm On-axis < 25 ...
به خواندن ادامه دهیدFebruary 8, 2023. Coherent Corp. Reports Fiscal 2023 First Quarter Results. November 9, 2022 View Fiscal 2023 Q1 Results. II-VI Changes Name to Coherent and Launches New Brand Identity. September 8, 2022. II-VI Incorporated Reports Q4 and Full-Year Fiscal 2022 Results. August 24, 2022 View Fiscal 2022 Full Year Results.
به خواندن ادامه دهیدThe key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation, and increased bandwidth capability. ... October 10, 2019: II-VI Incorporated Unveils the …
به خواندن ادامه دهیدAs announced earlier this month, optical component and materials maker II-VI has licensed Silicon Carbide (SiC) technology from General Electric with a view to move into power devices and modules. Just like Cree/Wolfspeed and Rohm Group Company (including SiCrystal), the main competitors of II-VI on the SiC wafer market, the new …
به خواندن ادامه دهیدWe have opened the world's largest Silicon Carbide fabrication facility in Marcy, New York. This brand new, state-of-the-art power wafer fab will be automotive-qualified and 200mm-capable. It is complemented by our …
به خواندن ادامه دهیدDUNS#: 05-552-9333: Company Name: Ii-VI Incorporated: Tradestyle: II-VI: Top Contact: Restricted: Title: Restricted: Street Address: 375 Saxonburg Blvd, Saxonburg PA ...
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