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In November 2021, Qorvo acquired United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of …
به خواندن ادامه دهیدQorvo® UnitedSiC . 2021 11 4 — 、、 RF Qorvo®, Inc.（：QRVO）,（SiC） ...
به خواندن ادامه دهیدQorvo, Inc. (QRVO) - DEFA14A - Additional Proxy Soliciting Materials (definitive) SEC Filings Wed, Jun. 28 Qorvo, Inc. (QRVO) - DEF 14A - Proxy Statement (definitive)
به خواندن ادامه دهیدGREENSBORO, N.C., May 4, 2022 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced financial results for the Company's fiscal 2022 fourth quarter ended April 2, 2022. On a GAAP basis, revenue for Qorvo's fiscal 2022 fourth quarter was $1.166 billion, gross margin was 48.9%, …
به خواندن ادامه دهیدProducts. Drawing on nearly 30 years of providing industry-leading solutions, Qorvo continues to offer the products that enable the next generation of systems. From GaAs, GaN, SAW, BAW, CMOS and SiGe, Qorvo has the right technology, the right products and the right solutions to help you shape and launch your most powerful new ideas for a …
به خواندن ادامه دهیدThese wide band-gap technology materials provide step improvements in power conversion efficiency and size reduction compared with traditional silicon-based part offerings. With the new ability of size reduction using SiC, Qorvo's SiC-FET technology has extended its lead in developing a 750V device with a TO-Leadless (TOLL) package.
به خواندن ادامه دهیدDelivering Big Switching Power in a Small Package with SiC FETs. New semiconductor switch tech emerges occasionally, like SiC and GaN, offering superior power efficiency and size to traditional silicon parts. Understand how Qorvo's SiC-FET goes beyond with a 750V device in a small TO-Leadless package, offering unique design advantages.
به خواندن ادامه دهیدBuy. Qorvo's UF3C065080B7S 650 V, 85 mohm RDS (on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device s standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs ...
به خواندن ادامه دهیدThe acquisition of UnitedSiC has extended Qorvo's reach into the fast-growing markets for electric vehicles (EVs), industrial power, circuit protection, renewables and data center power. This post is a collection of blogs that provide you with a deep dive into a comprehensive understanding of silicon carbide (SiC) power semiconductors and …
به خواندن ادامه دهیدQorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS (on)) as low as 25 mohms. Gate charge (QG) is also low, allowing for low conduction and reduced switching loss. These products are also ideal for circuit protection applications.
به خواندن ادامه دهیدQorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged ...
به خواندن ادامه دهیدQorvo(コルボ)ってどんなだろう？がすごい?というにおえします。Qorvoのがどのようにたちのをつなげ、をしているのかしくりたいはこちらをクリック。
به خواندن ادامه دهیدQorvo offers a wide array of silicon carbide (SiC) FETs, JFETs and Schottky Diodes. Our SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole and surface mount packages, with excellent cost effectiveness. Our SiC JFETs are high-performance normally-on JFET transistors with ultra-low on ...
به خواندن ادامه دهیدGREENSBORO, N.C., Nov. 03, 2021 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United …
به خواندن ادامه دهیدQorvo, Inc. and Subsidiaries Annual Report on Form 10-K 2022 Our business is diversified primarily across the following end markets: mobile devices, cellular base stations, power management and conversion, wireless connectivity, defense and aerospace, automotive connectivity and other markets. To solve our customers' most critical RF and ...
به خواندن ادامه دهیدOur SiC technology, together with Qorvo's complementary Programmable Power Management products and world-class supply chain capabilities, enable us to deliver superior levels of power efficiency ...
به خواندن ادامه دهیدCompact, 50-volt transistors reduce current loss and simplify design. GREENSBORO, NC – June 5, 2017 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced a new family of 50-volt gallium nitride on silicon carbide (GaN-on-SiC) transistors that improve performance, …
به خواندن ادامه دهیدGREENSBORO, N.C., Nov. 03, 2021 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, …
به خواندن ادامه دهیدGREENSBORO, NC – January 24, 2022 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced a …
به خواندن ادامه دهیدUnitedSiC（ Qorvo） 1200 V SiC FET –2022 5 11 – 、、 RF Qorvo ® （： QRVO ） 1200V (SiC) …
به خواندن ادامه دهیدQorvo® TOLL 5.4mΩ 750V SiC FETs. ,2023 3 21 —— Qorvo ® （：QRVO）, (TOLL),：750V SiC FET 5 ...
به خواندن ادامه دهیدOver multiple decades, Qorvo has built and delivered the industry's best RF products, all based on deep manufacturing and compound semiconductor expertise. Now, Qorvo is strengthening its portfolio with best-in-class smart power management and SiC power products. Our goal is to always build the most intelligent, efficient power solutions that …
به خواندن ادامه دهیدQorvo's family of SiC Schottky diodes that are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. SiC JFETs. Qorvo's family of SiC JFETs are high-performance SiC normally-on JFET transistors, from 650V to 1700V, with ultra-low on resistance (RDS (on)) as low as 25mohm.
به خواندن ادامه دهیدQorvo is among the few manufacturers with all the required packaging, Si and SiC expertise in one team to accomplish this. Finally, SiC MOSFETs are easier to control with gate resistors, while SiC cascodes have a limited control range, requiring the Qorvo approach of application tailored devices. These devices then offer best-in-class performance.
به خواندن ادامه دهیدQorvo's silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling …
به خواندن ادامه دهیدGREENSBORO, N.C., Aug. 25, 2022 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, today introduced the highest gain 100 watt L-band (1.2-1 ...
به خواندن ادامه دهیدGREENSBORO, NC and AUBURN, MI – November 2, 2022 – Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, and SK …
به خواندن ادامه دهیدThe three new GaN solutions display Qorvo's unique ability to combine best-in-class power, efficiency and gain in form factors that allow customers unparalleled design flexibility without sacrificing performance. The new products allow defense manufacturers to develop cost effective next-generation systems optimized for size, weight and power.
به خواندن ادامه دهیدDecember 1, 2020, Princeton, New Jersey— UnitedSiC [Now Qorvo], a leading manufacturer of silicon carbide (SiC) power semiconductors, has launched the first four devices based on its advanced Gen 4 SiC FET technology platform.As the first and only 750V SiC FETs currently available on the market, these Gen 4 devices enable new …
به خواندن ادامه دهیدRF power densities for GaN-on-SiC are 5 to 6x higher than gallium arsenide (GaAs)-based RF amplifiers. Its proven ability makes it ideal for, defense and aerospace applications such as, electronic warfare, communications, navigation and similar uses. GaN-on-SiC gives customers the flexibility to reduce board space and system costs …
به خواندن ادامه دهیدInvestor Relations Contact: Doug DeLieto VP, Investor Relations W +1 336-678-7968: Media Contact: Brent Dietz Qorvo Director of Corporate Communications
به خواندن ادامه دهیدQorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power …
به خواندن ادامه دهیدQorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC …
به خواندن ادامه دهیددر جنگ دوم چین و ژاپن (۴۵–۱۹۳۷) که بخشی از جنگ جهانی دوم بود، یک ائتلاف اجباری بین کومین‌تانگ و حزب کمونیست برای مقابله ژاپن شکل گرفت. در طول این جنگ حدود ۲۰ میلیون چینی کشته شده و موارد متعددی ...
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